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KSA1370F PDF预览

KSA1370F

更新时间: 2024-09-26 18:43:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 138K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN

KSA1370F 技术参数

生命周期:Obsolete零件包装代码:TO-92L
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.79
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

KSA1370F 数据手册

 浏览型号KSA1370F的Datasheet PDF文件第2页浏览型号KSA1370F的Datasheet PDF文件第3页浏览型号KSA1370F的Datasheet PDF文件第4页浏览型号KSA1370F的Datasheet PDF文件第5页 
KSA1370  
PNP EPITAXIAL SILICON TRNSISTOR  
CRT DISPLAY, VIDEO OUTPUT  
· High Voltage  
TO-92L  
· Low Reverse Transfer Capacitance: CRE= 1.7pF  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
-200  
-200  
-5  
-100  
-200  
1.0  
V
V
V
mA  
mA  
W
°C  
°C  
VCEO  
VEBO  
IC(DC)  
IC (Pulse)  
PC  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
150  
-55 ~ 150  
1. Emitter 2. Collector 3. Base  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
IEBO  
hFE  
VCE (sat)  
VBE (on)  
fT  
Test Condition  
Min  
Typ  
Max  
Unit  
IC= -10mA, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current-Gain-Bandwidth Product  
Output Capacitance  
-200  
-200  
-5  
V
V
V
mA  
mA  
IC= -1mA, IB=0  
IE= -10mA, IC=0  
VCB= -150V, IE=0  
VEB= -4V, IC=0  
VCE= -10V, IC= -10mA  
IC= -20mA, IB= -2mA  
IC= -20mA, IB= -2mA  
VCE= -30V, IC= -10mA  
VCB= -30V, f=1MHz  
VCB= -30V, f=1MHz  
-0.1  
-0.1  
320  
-0.6  
-1.0  
40  
V
V
MHz  
pF  
pF  
150  
2.6  
1.7  
COB  
CRE  
Reverse Transfer Capacitance  
hFE CLASSIFICATION  
Classification  
D
E
F
hFE  
60~120  
100~200  
160~320  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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