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KSA1370 PDF预览

KSA1370

更新时间: 2024-09-25 22:32:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 显示器
页数 文件大小 规格书
5页 47K
描述
Crt Display, Video Output

KSA1370 技术参数

生命周期:Obsolete零件包装代码:TO-92L
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.79
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

KSA1370 数据手册

 浏览型号KSA1370的Datasheet PDF文件第2页浏览型号KSA1370的Datasheet PDF文件第3页浏览型号KSA1370的Datasheet PDF文件第4页浏览型号KSA1370的Datasheet PDF文件第5页 
KSA1370  
Crt Display, Video Output  
High Voltage  
Low Reverse Transfer Capacitance : C = 1.7pF  
re  
TO-92L  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Trnsistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-200  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
V
V
CBO  
-200  
CEO  
EBO  
-5  
V
I
I
-100  
mA  
mA  
W
C
-200  
CP  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
1.0  
C
T
T
150  
°C  
°C  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-200  
-200  
-5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I = -10µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -1mA, I =0  
C B  
I = -10µA, I =0  
V
E
C
I
I
V
= -150V, I =0  
-0.1  
-0.1  
320  
-0.6  
-1.0  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
= -4V, I =0  
C
h
DC Current Gain  
= -10V, I = -10mA  
100  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -20mA, I = -2mA  
V
V
CE  
C
B
I = -20mA, I = -2mA  
BE  
C
B
f
Current Gain Bandwidth Product  
Output Capacitance  
V
= -30V, I = -10mA  
150  
2.6  
1.7  
MHz  
pF  
pF  
T
CE  
CB  
CB  
C
C
C
V
V
= -30V, f=1MHz  
= -30V, f=1MHz  
ob  
re  
Reverse Transfer Capacitance  
©2002 Fairchild Semiconductor Corporation  
Rev. C, December 2002  

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