生命周期: | Obsolete | 零件包装代码: | TO-92L |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.79 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSA1370D | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L | |
KSA1370-D | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
KSA1370E | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L | |
KSA1370-E | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
KSA1370ETA | FAIRCHILD |
获取价格 |
暂无描述 | |
KSA1370F | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L | |
KSA1370FBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, LEAD F | |
KSA1378 | FAIRCHILD |
获取价格 |
Low Frequency Power Amplifier | |
KSA1378 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, | |
KSA1378-G | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, |