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KS24A011CS PDF预览

KS24A011CS

更新时间: 2024-11-05 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
16页 122K
描述
EEPROM, 1KX1, Serial, CMOS, PDSO8, SOP-8

KS24A011CS 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
JESD-30 代码:R-PDSO-G8长度:4.92 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:1功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:-25 °C
组织:1KX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.95 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.95 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

KS24A011CS 数据手册

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KS24A011/021/041/081/161  
1K/2K/4K/8K/16K-bit  
Serial EEPROM for Low Power  
Data Sheet  
OVERVIEW  
The KS24A011/021/041/081/161 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit capacity, supporting  
the standard I2C™-bus serial interface. It is fabricated using Samsungs most advanced CMOS technology. It has  
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a  
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled  
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into  
the EEPROM in a single write operation. Another significant feature of the KS24A011/021/041/081/161 is its  
support for fast mode and standard mode.  
FEATURES  
I2C-Bus Interface  
Operating Characteristics  
·
·
Two-wire serial interface  
·
Operating voltage  
— 1.8 V to 5.5 V  
Automatic word address increment  
EEPROM  
·
Operating current  
— Maximum write current: < 3 mA at 5.5 V  
— Maximum read current: < 200 mA at 5.5 V  
— Maximum stand-by current: < 1 mA at 5.5 V  
Operating temperature range  
— – 25°C to + 70°C (commercial)  
— – 40°C to + 85°C (industrial)  
Operating clock frequencies  
— 100 kHz at standard mode  
— 400 kHz at fast mode  
·
1K/2K/4K/8K/16K-bit  
(128/256/512/1,024/2,048-byte) storage area  
·
·
16-byte page buffer  
Typical 3 ms write cycle time with  
auto-erase function  
·
·
·
·
·
Hardware-based write protection for the entire  
EEPROM (using the WP pin)  
EEPROM programming voltage generated  
on chip  
·
·
1,000,000 erase/write cycles  
100 years data retention  
Electrostatic discharge (ESD)  
— 5,000 V (HBM)  
— 500 V (MM)  
Packages  
8-pin DIP, SOP, and TSSOP  
·
1-1  

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