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KS24A021CS PDF预览

KS24A021CS

更新时间: 2024-11-06 06:05:47
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
16页 122K
描述
EEPROM, 2KX1, Serial, CMOS, PDSO8, SOP-8

KS24A021CS 数据手册

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KS24A011/021/041/081/161  
1K/2K/4K/8K/16K-bit  
Serial EEPROM for Low Power  
Data Sheet  
OVERVIEW  
The KS24A011/021/041/081/161 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit capacity, supporting  
the standard I2C™-bus serial interface. It is fabricated using Samsungs most advanced CMOS technology. It has  
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a  
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled  
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into  
the EEPROM in a single write operation. Another significant feature of the KS24A011/021/041/081/161 is its  
support for fast mode and standard mode.  
FEATURES  
I2C-Bus Interface  
Operating Characteristics  
·
·
Two-wire serial interface  
·
Operating voltage  
— 1.8 V to 5.5 V  
Automatic word address increment  
EEPROM  
·
Operating current  
— Maximum write current: < 3 mA at 5.5 V  
— Maximum read current: < 200 mA at 5.5 V  
— Maximum stand-by current: < 1 mA at 5.5 V  
Operating temperature range  
— – 25°C to + 70°C (commercial)  
— – 40°C to + 85°C (industrial)  
Operating clock frequencies  
— 100 kHz at standard mode  
— 400 kHz at fast mode  
·
1K/2K/4K/8K/16K-bit  
(128/256/512/1,024/2,048-byte) storage area  
·
·
16-byte page buffer  
Typical 3 ms write cycle time with  
auto-erase function  
·
·
·
·
·
Hardware-based write protection for the entire  
EEPROM (using the WP pin)  
EEPROM programming voltage generated  
on chip  
·
·
1,000,000 erase/write cycles  
100 years data retention  
Electrostatic discharge (ESD)  
— 5,000 V (HBM)  
— 500 V (MM)  
Packages  
8-pin DIP, SOP, and TSSOP  
·
1-1  

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