5秒后页面跳转
KS24A041I PDF预览

KS24A041I

更新时间: 2024-11-05 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
16页 122K
描述
EEPROM, 4KX1, Serial, CMOS, PDIP8, DIP-8

KS24A041I 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDIP-T8
长度:9.2 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:1
功能数量:1端子数量:8
字数:4096 words字数代码:4000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4KX1
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:5.08 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:7.62 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

KS24A041I 数据手册

 浏览型号KS24A041I的Datasheet PDF文件第2页浏览型号KS24A041I的Datasheet PDF文件第3页浏览型号KS24A041I的Datasheet PDF文件第4页浏览型号KS24A041I的Datasheet PDF文件第5页浏览型号KS24A041I的Datasheet PDF文件第6页浏览型号KS24A041I的Datasheet PDF文件第7页 
KS24A011/021/041/081/161  
1K/2K/4K/8K/16K-bit  
Serial EEPROM for Low Power  
Data Sheet  
OVERVIEW  
The KS24A011/021/041/081/161 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit capacity, supporting  
the standard I2C™-bus serial interface. It is fabricated using Samsungs most advanced CMOS technology. It has  
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a  
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled  
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into  
the EEPROM in a single write operation. Another significant feature of the KS24A011/021/041/081/161 is its  
support for fast mode and standard mode.  
FEATURES  
I2C-Bus Interface  
Operating Characteristics  
·
·
Two-wire serial interface  
·
Operating voltage  
— 1.8 V to 5.5 V  
Automatic word address increment  
EEPROM  
·
Operating current  
— Maximum write current: < 3 mA at 5.5 V  
— Maximum read current: < 200 mA at 5.5 V  
— Maximum stand-by current: < 1 mA at 5.5 V  
Operating temperature range  
— – 25°C to + 70°C (commercial)  
— – 40°C to + 85°C (industrial)  
Operating clock frequencies  
— 100 kHz at standard mode  
— 400 kHz at fast mode  
·
1K/2K/4K/8K/16K-bit  
(128/256/512/1,024/2,048-byte) storage area  
·
·
16-byte page buffer  
Typical 3 ms write cycle time with  
auto-erase function  
·
·
·
·
·
Hardware-based write protection for the entire  
EEPROM (using the WP pin)  
EEPROM programming voltage generated  
on chip  
·
·
1,000,000 erase/write cycles  
100 years data retention  
Electrostatic discharge (ESD)  
— 5,000 V (HBM)  
— 500 V (MM)  
Packages  
8-pin DIP, SOP, and TSSOP  
·
1-1  

与KS24A041I相关器件

型号 品牌 获取价格 描述 数据表
KS24A041IS SAMSUNG

获取价格

EEPROM, 4KX1, Serial, CMOS, PDSO8, SOP-8
KS24A041ISTF SAMSUNG

获取价格

EEPROM, 4KX1, Serial, CMOS, PDSO8, SOP-8
KS24A041IT SAMSUNG

获取价格

EEPROM, 4KX1, Serial, CMOS, PDSO8, TSSOP-8
KS24A041ITTF SAMSUNG

获取价格

EEPROM, 4KX1, Serial, CMOS, PDSO8, TSSOP-8
KS24A081C SAMSUNG

获取价格

EEPROM, 8KX1, Serial, CMOS, PDIP8, DIP-8
KS24A081CTTF SAMSUNG

获取价格

EEPROM, 8KX1, Serial, CMOS, PDSO8, TSSOP-8
KS24A081I SAMSUNG

获取价格

EEPROM, 8KX1, Serial, CMOS, PDIP8, DIP-8
KS24A081ISTF SAMSUNG

获取价格

EEPROM, 8KX1, Serial, CMOS, PDSO8, SOP-8
KS24A081IT SAMSUNG

获取价格

EEPROM, 8KX1, Serial, CMOS, PDSO8, TSSOP-8
KS24A1281C SAMSUNG

获取价格

EEPROM, 128KX1, Serial, CMOS, PDIP8, DIP-8