Datasheet > KS24A020CTTF

KS24A020CTTF

更新时间： 2024-11-06 07:23:19

品牌	Logo	应用领域
三星 - SAMSUNG		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
18页	132K
描述
EEPROM, 2KX1, Serial, CMOS, PDSO8, TSSOP-8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KS24A020CTTF 数据手册

KS24A010/020/040

1K/2K/4K-bit

Serial EEPROM for Low Power

with software write protect

Data Sheet

OVERVIEW

The KS24A010/020/040 serial EEPROM has a 1,024/2,048/4,096-bit (128/256/512-byte) capacity, supporting the

standard I²C™-bus serial interface. It is fabricated using Samsung’s most advanced CMOS technology. It has

been developed for low power and low voltage applications (1.8 V to 5.5 V). Important features are a hardware-

based write protection circuit for the entire memory area and software-based write protection logic for the lower

128 bytes. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. The software-

based method is one-time programmable and permanent. Using one-page write mode, you can load up to 16

bytes of data into the EEPROM in a single write operation. Another significant feature of the KS24A010/020/040

is its support for fast mode and standard mode.

FEATURES

I²C-Bus Interface

Operating Characteristics

Two-wire serial interface

Operating voltage

— 1.8 V to 5.5 V

Automatic word address increment

EEPROM

Operating current

— Maximum write current: < 3 mA at 5.5 V

— Maximum read current: < 200 mA at 5.5 V

— Maximum stand-by current: < 1 mA at 5.5 V

Operating temperature range

— – 25°C to + 70°C (commercial)

— – 40°C to + 85°C (industrial)

Operating clock frequencies

— 100 kHz at standard mode

— 400 kHz at fast mode

1K/2K/4K-bit (128/256/512-byte) storage area

16-byte page buffer

Typical 3 ms write cycle time with

auto-erase function

Hardware-based write protection for the entire

EEPROM (using the WP pin)

Software-based write protection for the lower

128-byte EEPROM

EEPROM programming voltage generated

on chip

1,000,000 erase/write cycles

100 years data retention

Electrostatic discharge (ESD)

— 5,000 V (HBM)

— 500 V (MM)

Packages

8-pin DIP, SOP, and TSSOP

2-1

12 3 4 5 6 7...18

中文翻译

下载PDF

与KS24A020CTTF相关器件

型号	品牌	获取价格	描述	数据表
KS24A020ITTF	SAMSUNG	获取价格	EEPROM, 2KX1, Serial, CMOS, PDSO8, TSSOP-8
KS24A021CS	SAMSUNG	获取价格	EEPROM, 2KX1, Serial, CMOS, PDSO8, SOP-8
KS24A021CSTF	SAMSUNG	获取价格	EEPROM, 2KX1, Serial, CMOS, PDSO8, SOP-8
KS24A021IS	SAMSUNG	获取价格	EEPROM, 2KX1, Serial, CMOS, PDSO8, SOP-8
KS24A021ISTF	SAMSUNG	获取价格	EEPROM, 2KX1, Serial, CMOS, PDSO8, SOP-8
KS24A040C	SAMSUNG	获取价格	EEPROM, 4KX1, Serial, CMOS, PDIP8, DIP-8
KS24A040CS	SAMSUNG	获取价格	EEPROM, 4KX1, Serial, CMOS, PDSO8, SOP-8
KS24A040CSTF	SAMSUNG	获取价格	EEPROM, 4KX1, Serial, CMOS, PDSO8, SOP-8
KS24A040CT	SAMSUNG	获取价格	EEPROM, 4KX1, Serial, CMOS, PDSO8, TSSOP-8
KS24A040CTTF	SAMSUNG	获取价格	EEPROM, 4KX1, Serial, CMOS, PDSO8, TSSOP-8