Datasheet > KRX103

KRX103

更新时间： 2024-09-25 22:32:07

品牌	Logo	应用领域
KEC		晶体开关晶体管驱动局域网
页数	文件大小	规格书
3页	89K
描述
EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

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中文翻译

获取价格

数据手册

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KRX103 数据手册

KRX103E

EPITAXIAL PLANAR NPN/PNP TRANSISTOR

SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

ᴌIncluding two devices in TESV.

(Thin Extreme Super mini type with 5 pin.)

ᴌWith Built-in bias resistors.

DIM MILLIMETERS

1.6+0.05

1.0+0.05

1.6+0.05

ᴌSimplify circuit design.

1.2 0.05

ᴌReduce a quantity of parts and manufacturing process.

0.50

0.2+0.05

0.5 0.05

0.12 0.05

EQUIVALENT CIRCUIT

OUT

1. Q COMMON (EMITTER)

, Q

2. Q IN (BASE)

3. Q COMMON (EMITTER)

R1=22KΩ

R2=22KΩ

4. Q OUT (COLLECTOR)

5. Q OUT (COLLECTOR)

COMMON

IN (BASE)

TESV

EQUIVALENT CIRCUIT (TOP VIEW)

Marking

Type Name

Q1 MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

Output Voltage

SYMBOL

RATING

UNIT

V_O

V_I

I_O

Input Voltage

40, -10

100

Output Current

Ὠ

Q2 MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

Output Voltage

SYMBOL

RATING

-50

UNIT

V_O

V_I

I_O

Input Voltage

-40, 10

-100

Output Current

Ὠ

Q1, Q2 MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

P_D*

RATING

200

UNIT

Ὥ

Power Dissipation

T_j

Junction Temperature

150

ᴱ

T_stg

Storage Temperature Range

* Total Raing.

-55ᴕ150

ᴱ

2002. 1. 24

Revision No : 1

1/3

12 3

中文翻译

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