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KRX210E PDF预览

KRX210E

更新时间: 2024-06-13 09:08:29
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
4页 219K
描述
TES6

KRX210E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78其他特性:BUILT IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):140
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

KRX210E 数据手册

 浏览型号KRX210E的Datasheet PDF文件第2页浏览型号KRX210E的Datasheet PDF文件第3页浏览型号KRX210E的Datasheet PDF文件第4页 
KRX210E  
EPITAXIAL PLANAR NPN/PNP TRANSISTOR  
SEMICONDUCTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B1  
FEATURES  
Including two devices in TES6.  
With Built-in bias resistors.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Simplify circuit design.  
_
1.6+0.05  
_
1.2+0.05  
B1  
C
Reduce a quantity of parts and manufacturing process.  
· Suffix U : Qualified to AEC-Q101.  
ex) KRX210E-RTK/HU  
0.50  
_
0.2+0.05  
4
D
E
_
0.35+0.05  
E
_
0.5+0.05  
H
J
P
P
_
0.12+0.05  
P
5
EQUIVALENT CIRCUIT  
Q1  
Q
Q
2
OUT  
OUT  
R1=1  
1. Q COMMON (EMITTER)  
1
R2=10  
2. Q IN (BASE)  
1
R1  
R1  
3. Q OUT (COLLECTOR)  
2
IN  
IN  
4. Q COMMON (EMITTER)  
2
Q2  
5. Q IN (BASE)  
2
6. Q OUT (COLLECTOR)  
1
R1=10  
R2=10  
R2  
COMMON  
R2  
COMMON  
TES6  
EQUIVALENT CIRCUIT (TOP VIEW)  
Marking  
6
5
4
6
5
4
Lot No.  
Type Name  
Q1  
Q2  
MN  
1
2
3
1
2
3
Q1 MAXIMUM RATING (Ta=25  
)
)
CHARACTERISTIC  
Output Voltage  
SYMBOL  
RATING  
-30  
UNIT  
VO  
VI  
IO  
V
V
Input Voltage  
-30, 5  
-500  
Output Current  
Q2 MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
Output Voltage  
SYMBOL  
RATING  
50  
UNIT  
V
VO  
VI  
IO  
Input Voltage  
30, -10  
100  
V
Output Current  
Q1, Q2 MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
PD *  
RATING  
200  
UNIT  
Power Dissipation  
Tj  
Junction Temperature  
-55~150  
-55 150  
Tstg  
Storage Temperature Range  
* Total Rating.  
2021. 04. 07  
Revision No : 5  
1/4  

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