5秒后页面跳转
KRX211U PDF预览

KRX211U

更新时间: 2024-01-25 16:37:30
品牌 Logo 应用领域
KEC 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
4页 93K
描述
EPITAXIAL PLANAR PNP/NPN TRANSISTOR

KRX211U 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):260 MHzBase Number Matches:1

KRX211U 数据手册

 浏览型号KRX211U的Datasheet PDF文件第2页浏览型号KRX211U的Datasheet PDF文件第3页浏览型号KRX211U的Datasheet PDF文件第4页 
KRX211U  
EPITAXIAL PLANAR PNP/NPN TRANSISTOR  
SEMICONDUCTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
B1  
FEATURES  
Including two devices in US6.  
(Ultra Super mini type with 6 leads.)  
With Built-in bias resistors.  
Simplify circuit design.  
DIM MILLIMETERS  
_
1
2
3
6
5
4
A
A1  
B
2.00+0.20  
_
1.3+0.1  
_
2.1+0.1  
D
_
B1  
C
1.25+0.1  
0.65  
0.2+0.10/-0.05  
0-0.1  
Reduce a quantity of parts and manufacturing process.  
D
G
_
H
T
0.9+0.1  
0.15+0.1/-0.05  
T
EQUIVALENT CIRCUIT  
Q
Q
2
G
C
1
OUT  
1. Q (EMITTER)  
1
R1  
Q
2. Q (BASE)  
2
1
IN  
B
3. Q OUT (COLLECTOR)  
2
R1=2.2K  
R2=2.2KΩ  
4. Q COMMON (EMITTER)  
2
5. Q IN (BASE)  
2
6. Q (COLLECTOR)  
R2  
1
E
COMMON  
US6  
EQUIVALENT CIRCUIT (TOP VIEW)  
Marking  
Type Name  
6
5
4
6
5
4
Q1  
BF  
Q2  
1
2
3
1
2
3
Q1 MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
Collector-Base Voltage  
-15  
-12  
-6  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
-500  
-1  
a
Collector Current  
ICP  
*
* Single pulse Pw=1mS.  
Q2 MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
Output Voltage  
SYMBOL  
RATING  
50  
UNIT  
V
VO  
VI  
IO  
Input Voltage  
12, -10  
100  
V
Output Current  
Q1, Q2 MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
PD *  
RATING  
200  
UNIT  
Power Dissipation  
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
* Total Raing.  
-55150  
2002. 2. 18  
Revision No : 0  
1/4  

与KRX211U相关器件

型号 品牌 获取价格 描述 数据表
KRX212U KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR
KRX214U KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR
KRX416 RADIOMETRIX

获取价格

Code-hopping decoder with 4 outputs
KRX416-000-DIL RADIOMETRIX

获取价格

Code-hopping decoder with 4 outputs
KRX416-000-SO RADIOMETRIX

获取价格

Code-hopping decoder with 4 outputs
KRX416-000-SS RADIOMETRIX

获取价格

Code-hopping decoder with 4 outputs
KS0010 SAMSUNG

获取价格

Interface Circuit, PQFP48, 0.50 MM PITCH, LQFP-48
KS0015 SAMSUNG

获取价格

Liquid Crystal Driver, 120-Segment, DIE-167
KS0020 SAMSUNG

获取价格

Dot Matrix LCD Driver, CMOS
KS0031 SAMSUNG

获取价格

Dot Matrix LCD Driver, 8 X 80 Dots, CMOS