Datasheet > KC808

KC808

更新时间： 2024-11-25 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	41K
描述
PNP Silicon AF Transistors

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中文翻译

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数据手册

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KC808 数据手册

SMD Type

Transistors

PNP Silicon AF Transistors

KC808(BC808)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High collector current.

High current gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

Low collector-emitter saturation voltage.

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

power dissipation

Symbol

VCBO

VCEO

VEBO

Rating

-30

Unit

-25

-5

-800

310

Junction temperature

Storage temperature

150

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-30

-25

-5

Typ

Max

Unit

Collector-to-baser breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

VCBO

VCEO

IC = -10 A,VBE = 0

IC = -10 mA, IB = 0

IE = -10 A, IC = 0

VCB = -25 V, VBE= 0

VEB = -4 V, IC = 0

VEBO

ICES

Collector cutoff current

Emitter cutoff current

-100

630

IEBO

IC = -100 mA, VCE = -1 V

100

DC current gain *

hFE

IC = -300 mA, VCE = -1 V

Collector saturation voltage *

Base emitter on voltage

VCE(sat) IC = -500 mA, IB = -50 mA

VBE(on) VCE=-1V,IC=300mA

-0.7

-1.2

Output Capacitance

Transition frequency

Cob

VCB=-10V,f=1MHz

IC = -10 mA, VCE = -5 V, f = 50 MHz

100

MHz

* Pulsed: PW

350 ìs, duty cycle

Marking

NO.

Marking

hFE

KC808-16

9GA

KC808-25

9GB

KC808-40

9GC

100 250

160 400

250 630

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