Datasheet > KC817(BC817)

KC817(BC817)

更新时间： 2024-11-26 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1279K
描述
PNP Transistor

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中文翻译

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数据手册

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KC817(BC817) 数据手册

SMD Type

Transistors

NPN Transistors

BC817 (KC817)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● For general AF applications

● Low collector-emitter saturation voltage

●Complementary types: BC807 (PNP)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

0.5

0.3

150

℃

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 10 mA， I = 0

= 100μA， I = 0

CB= 45 V , I = 0

EB= 4V , I =0

=500 mA, I =50mA

= 500 mA, I = 50mA

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.7

1.2

630

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

CE= 1V, I

= 500mA

= 100mA

= 500mA

hFE(1)

100

DC current gain

hFE(2)

Collector output capacitance

Transition frequency

CB= 10V, f=1MHz

CE= 5V, I = 10mA,f=100MHz

100

MHz

■ Classification of hfe(1)

Type

BC817-16

100-250

BC817-25

160-400

BC817-40

250-630

Range

Marking

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