Datasheet > KC817A-40

KC817A-40

更新时间： 2024-11-21 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
NPN Silicon AF Transistors

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中文翻译

获取价格

数据手册

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KC817A-40 数据手册

SMD Type

Transistors

NPN Silicon AF Transistors

KC817A^(BC817A)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

For general AF applications.

High collector current.

High current gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Low collector-emitter saturation voltage.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

Base current

Symbol

VCBO

VCEO

VEBO

Rating

Unit

500

ICM

100

power dissipation

310

Junction temperature

Storage temperature

150

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Symbol

VCBO

Testconditons

IC = 10 A, IE = 0

Min

Typ

Max

Unit

VCEO

IC = 10 mA, IB = 0

IE = 10 A, IC = 0

VCB = 25 V, IE = 0

VEBO

ICBO

100

Collector cutoff current

Emitter cutoff current

VCB = 25 V, IE = 0 , TA = 150

VEB = 4 V, IC = 0

IEBO

hFE

100

250

400

630

0.7

1.2

KC817A-16

100

160

250

160

250

350

DC current gain *

IC = 100 mA, VCE = -1 V

KC817A-25

KC817A-40

Collector saturation voltage *

Base to emitter voltage *

Collector-base capacitance

Emitter-base capacitance

Transition frequency

VCE(sat) IC = 500 mA, IB = 50 mA

VBE(sat) IC = 500 mA, IB = 50 mA

CCb

Ceb

VCB = 10 V, f = 1 MHz

VEB = 0.5 V, f = 1 MHz

IC = 50 mA, VCE = 5 V, f = 100 MHz

170

MHz

* Pulsed: PW

350 ìs, duty cycle

Marking

NO.

KC817A-16

KC817A-25

KC817A-40

Marking

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