Datasheet > KC808A-25

KC808A-25

更新时间： 2024-10-14 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
PNP Silicon AF Transistors

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中文翻译

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数据手册

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KC808A-25 数据手册

SMD Type

Transistors

PNP Silicon AF Transistors

KC808A^(BC808A)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

For general AF applications.

High collector current.

High current gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Low collector-emitter saturation voltage.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

Base current

Symbol

VCBO

VCEO

VEBO

Rating

-30

Unit

-25

-5

-500

-1

ICM

-100

310

Total power dissipation

Storage temperature

Junction temperature

Ptot

Tstg

-65 to +150

150

Electrical Characteristics Ta = 25

Parameter

Symbol

VCBO

Testconditons

Min

Typ

Max

Unit

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

IC = -10 µA, IE = 0

IC = -10 mA, IB = 0

IE = -10 µA, IC = 0

VCB = -25 V, IE = 0

-30

-25

-5

VCEO

VEBO

ICBO

-100

-50

Collector cutoff current

Emitter cutoff current

VCB = -25 V, IE = 0 , TA = 150

VEB = -4 V, IC = 0

IEBO

hFE

-100

250

400

630

-0.7

-1.2

KC808A-16

100

160

250

160

250

350

DC current gain *

IC = -100 mA, VCE = -1 V

KC808A-25

KC808A-40

Collector saturation voltage *

Base to emitter voltage *

Collector-base capacitance

Emitter-base capacitance

Transition frequency

VCE(sat) IC = -500 mA, IB = -50 mA

VBE(sat) IC = -500 mA, IB = -50 mA

CCb

Ceb

VCB = -10 V, f = 1 MHz

VEB = -0.5 V, f = 1 MHz

IC = -50 mA, VCE = -5 V, f = 100 MHz

200

MHz

* Pulsed: PW

350 ìs, duty cycle

Marking

NO.

KC808A-16

KC808A-25

KC808A-40

Marking

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