Datasheet > KC818-40

KC818-40

更新时间： 2024-11-18 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
NPN Silicon AF Transistors

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中文翻译

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数据手册

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KC818-40 数据手册

SMD Type

Transistors

NPN Silicon AF Transistors

KC818(BC818)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

For general AF applications.

High collector current.

High current gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Low collector-emitter saturation voltage.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

power dissipation

Symbol

VCBO

VCEO

VEBO

Rating

Unit

800

310

Junction temperature

Storage temperature

150

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

VCBO

VCEO

IC = 10 A,VBE = 0

IC = 10 mA, IB = 0

IE = 10 A, IC = 0

VCB =25 V, VBE= 0

VEB =4 V, IC = 0

VEBO

ICES

Collector cutoff current

Emitter cutoff current

100

630

IEBO

IC =100 mA, VCE =1 V

100

DC current gain *

hFE

IC =300 mA, VCE =1 V

Collector saturation voltage *

Base emitter on voltage

VCE(sat) IC =500 mA, IB = 50 mA

VBE(on) VCE=1V,IC=300mA

0.7

1.2

Output Capacitance

Transition frequency

Cob

VCB=10V,f=1MHz

IC = 10 mA, VCE =5 V, f = 50 MHz

100

MHz

* Pulsed: PW

350 ìs, duty cycle

Marking

NO.

Marking

hFE

KC818-16

8GA

KC818-25

8GB

KC818-40

8GC

100 250

160 400

250 630

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