Datasheet > KC817-25

KC817-25

更新时间： 2024-11-26 18:09:19

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科信 - KEXIN		/
页数	文件大小	规格书
1页	53K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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KC817-25 数据手册

SMD Type

Transistors

NPN General Purpose Transistors

C817-25

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

■ Features

● For general AF applications.

● High collector current.

● High current gain.

+0.1

+0.05

0.95_-0.1

0.1_-0.01

● Low collector-emitter saturation voltage

+0.1

1.9_-0.1

● Complementary types:

(PNP)

KC807

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

power dissipation

Symbol

VCBO

VCEO

VEBO

Rating

Unit

500

ICM

300

℃

Junction temperature

Storage temperature

150

Tstg

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Symbol

Test conditions

IC = 10 μA, IE = 0

Min

Typ Max

Unit

V(BR)CBO

V(BR)CEO IC = 10 mA, IB = 0

V(BR)EBO

ICBO

IE = 10μA, IC = 0

VCB = 45 V, IE = 0

VEB =5 V , IC = 0

Collector cutoff current

Emitter cutoff current

100

400

IEBO

VCE = 1 V,IC = 100 mA

VCE = 1 V,IC = 500 mA

160

DC current gain *

hFE

Collector saturation voltage *

Base to emitter voltage *

VCE(sat) IC = 500 mA, IB = 50 mA

VBE(sat) IC = 500 mA, IB = 50 mA

0.7

1.2

Collector-base capacitance

Transition frequency

COb

VCB = 10 V, f = 1 MHz

IC =10 m A, VCE = 5 V, f = 100 MHz

100

MHz

* Pulsed: PW ≤ 350 μs, duty cycle ≤ 2%

■ Marking

Marking

6BW

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