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KC807

更新时间: 2024-11-09 05:40:47
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 41K
描述
PNP Silicon AF Transistors

KC807 数据手册

  
SMD Type  
Transistors  
PNP Silicon AF Transistors  
KC807(BC807)  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
For general AF applications.  
High collector current.  
High current gain.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Low collector-emitter saturation voltage.  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
power dissipation  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-50  
Unit  
V
-45  
V
-5  
V
-800  
mA  
mW  
PD  
310  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
-50  
-45  
-5  
Typ  
Max  
Unit  
V
Collector-to-base breakdown voltage  
Collector-to-emitter breakdown voltage  
Emitter-to-base breakdown voltage  
VCBO  
VCEO  
IC = -10 A,VBE = 0  
IC = -10 mA, IB = 0  
V
V
IE = -10 A, IC = 0  
VCB = -25 V, VBE= 0  
VEB = -4 V, IC = 0  
VEBO  
ICES  
Collector cutoff current  
Emitter cutoff current  
-100  
-100  
630  
nA  
nA  
IEBO  
IC = -100 mA, VCE = -1 V  
100  
60  
DC current gain *  
hFE  
IC = -300 mA, VCE = -1 V  
Collector saturation voltage *  
Base emitter on voltage  
VCE(sat) IC = -500 mA, IB = -50 mA  
VBE(on) VCE=-1V,IC=300mA  
-0.7  
-1.2  
12  
V
V
Output Capacitance  
Transition frequency  
Cob  
fT  
VCB=-10V,f=1MHz  
IC = -10 mA, VCE = -5 V, f = 50 MHz  
pF  
100  
MHz  
* Pulsed: PW  
350 ìs, duty cycle  
2%  
Marking  
NO.  
Marking  
hFE  
KC807-16  
9FA  
KC807-25  
9FB  
KC807-40  
9FC  
100 250  
160 400  
250 630  
1
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