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KBJ1008B1 PDF预览

KBJ1008B1

更新时间: 2024-11-14 14:43:03
品牌 Logo 应用领域
扬杰 - YANGJIE 局域网二极管
页数 文件大小 规格书
4页 574K
描述
Bridge Rectifier Diode, 1 Phase, 3.6A, 800V V(RRM), Silicon,

KBJ1008B1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.68
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:175 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3.6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:800 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBJ1008B1 数据手册

 浏览型号KBJ1008B1的Datasheet PDF文件第2页浏览型号KBJ1008B1的Datasheet PDF文件第3页浏览型号KBJ1008B1的Datasheet PDF文件第4页 
RoHS  
KBJ10005 THRU KBJ1010  
Bridge Rectifiers  
COMPLIANT  
Features  
UL recognition, file #E230084  
Thin single in-line package  
High surge current capability  
Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
Mechanical Data  
ackage: 4KBJ  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
-
+
~ ~  
(T =25Unless otherwise specified  
Maximum Ratings  
a
KBJ1001 KBJ1002 KBJ1004 KBJ1006 KBJ1008 KBJ1010  
PARAMETER  
SYMBOL UNIT KBJ10005  
KBJ1001 KBJ1002 KBJ1004 KBJ1006 KBJ1008 KBJ1010  
Device marking code  
KBJ10005  
V
Repetitive Peak Reverse Voltage  
V
A
50  
100  
200  
400  
600  
800  
1000  
RRM  
With heatsink  
Average Rectified Output  
Current @60Hz sine  
wave, R-load,  
10.0  
3.6  
Tc =110℃  
I
O
Without heatsink  
Ta =25℃  
Surge(non-repetitive)forward current  
I
A
A2S  
FSM  
I2t  
175  
@60Hz half-sine wave, 1 cycle, T =25℃  
j
Current squared time  
@1ms≤t≤8.3ms Tj=25,rating of per diode  
127  
Storage Temperature  
Junction Temperature  
T
-55 ~+150  
stg  
T
j
-55 ~+150  
2
Dielectric strength  
Vdis  
Tor  
KV  
@ terminals to case, AC 1 minute  
Mounting torque  
kg·cm  
8
@recommend torque5kg·cm  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
KBJ1001 KBJ1002 KBJ1004 KBJ1006 KBJ1008 KBJ1010  
KBJ10005  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
V
V
1.00  
5
F
I
=5.0A  
FM  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
I
RRM  
V
=V  
μA  
RM RRM  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B086  
Rev. 2.1, 24-Nov-14  
www.21yangjie.com  

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