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KBJ1010G-BP PDF预览

KBJ1010G-BP

更新时间: 2024-02-29 22:27:03
品牌 Logo 应用领域
美微科 - MCC 局域网二极管
页数 文件大小 规格书
3页 589K
描述
Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ, 4 PIN

KBJ1010G-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.83其他特性:UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:120 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBJ1010G-BP 数据手册

 浏览型号KBJ1010G-BP的Datasheet PDF文件第2页浏览型号KBJ1010G-BP的Datasheet PDF文件第3页 
KBJ10005G  
THRU  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
KBJ1010G  
Features  
10 Amp  
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
Halogen free available upon request by adding suffix "-HF"  
Epoxy meets UL 94 V-0 flammability rating  
GLASS PASSIVATED  
BRIDGE RECTIFIERS  
50 to 1000 Volts  
Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
KBJ  
Maximum Ratings  
Operating Junction Temperature: -55°C to + 150°C  
Storage Temperature: -55°C to +150°C  
P
D
A
UL Recognized File # E165989  
E
O
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
F
B
RMS  
DC  
N
ˀ
ʾ
̑
̑
Voltage  
Blocking  
Voltage  
G
H
C
I
J
KBJ10005G KBJ10005G  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
L
KBJ1001G  
KBJ1002G  
KBJ1004G  
KBJ1006G  
KBJ1008G  
KBJ1010G  
KBJ1001G  
KBJ1002G  
KBJ1004G  
KBJ1006G  
KBJ1008G  
KBJ1010G  
K
140V  
280V  
420V  
560V  
700V  
M
~
~
Case Type  
DIMENSIONS  
INCHES  
MIN MAX  
.992  
MM  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
10A  
DIM  
A
B
MIN  
24.80  
14.70  
MAX  
25.20  
15.30  
NOTE  
.976  
.579  
Average Forward  
Current  
IF(AV)  
TC = 100°C  
.602  
C
D
E
F
G
H
.154  
.173  
.161  
.189  
3.90  
4.40  
3.40  
3.10  
3.30  
0.90  
4.10  
4.80  
3.80  
3.40  
3.70  
1.10  
Peak Forward Surge  
Current  
IFSM  
8.3ms, half sine  
170A  
.134  
.122  
.150  
.134  
.130  
.035  
.146  
.043  
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.1V  
IFM = 5.0A per  
element;  
I
J
K
L
M
.059  
.669  
.287  
.075  
.709  
.303  
1.50  
17.00  
7.30  
2.50  
0.60  
1.90  
18.00  
7.70  
2.90  
0.80  
TA = 25°C (Note 2)  
.098  
.024  
.114  
.031  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
N
O
P
.366  
9.30  
.413  
10.50  
TJ=25 OC  
TJ=125 OC  
5µA  
.118X45  
3.0X45  
°
IR  
°
.122  
.134  
3.10  
3.40  
500µA  
I2t Rating for fusing  
I2t  
2
(t<8.3ms)  
120A S  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
2. Pulse Test: Pulse Width 300usec, Duty Cycle 1%  
www.mccsemi.com  
1 of 3  
Revision:D  
2016/09/08  

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