KBJ1010

更新时间： 2024-11-14 03:47:27

品牌	Logo	应用领域
虹扬 - HY		整流二极管
页数	文件大小	规格书
2页	41K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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技术参数
数据手册

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KBJ1010 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.68
Is Samacsys：	N	Base Number Matches：	1

KBJ1010 数据手册

KBJ10005 thru KBJ1010

REVERSE VOLTAGE - 50 to 1000Volts

FORWARD CURRENT - 10 Amperes

SILICON BRIDGE RECTIFIERS

KBJ

FEATURES

●Rating to 1000V PRV

? .134(3.4)

? .122(3.1)

.213(5.4)

●Ideal for printed circuit board

.197(5.0)

.173(4.4)

.157(4.0)

1.193(30.3)

1.169(29.7)

●Low forward voltage drop,high current capability

●Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

●The plastic material has UL flammability

classification 94V-0

.106(2.7)

.096(2.3)

.094(2.4)

.075(1.9)

.114(2.9)

.098(2.5)

.043(1.1)

.035(0.9)

.031(0.8)

.023(0.6)

.402(10.2)

.386(9.8)

.303(7.7).303(7.7)

SPACING

.287(7.3)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

KBJ

10005

KBJ

1001

KBJ

1002

KBJ

1004

KBJ

1006

KBJ

1008

KBJ

1010

SYMBOL

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

10.0

3.0

Maximum Average Forward (with heatsink Note 2)

I(AV)

Rectified Current

@ TC=110℃ (without heatsink)

Peak Forward Surage Current

IFSM

240

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

1.0

Maximum Forward Voltage at 5.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ TJ=25℃

500

@ TJ=125℃

I²t

A²s

I²t Rating for Fusing (t<8.3ms)

120

Typical Junction Capacitance Per Element (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

RθJC

℃/W

℃

1.4

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 150mm*150mm*1.6mm cu plate heatsink.

~ 261 ~

中文翻译

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