Datasheet > KBJ1010

KBJ1010

更新时间： 2024-11-14 03:47:27

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
2页	114K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

获取价格

技术参数
数据手册

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KBJ1010 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.68
Is Samacsys：	N	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.1 V
最大非重复峰值正向电流：	180 A	元件数量：	4
最高工作温度：	125 °C	最大输出电流：	10 A
最大重复峰值反向电压：	1000 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

KBJ1010 数据手册

DATA SHEET

KBJ1000~KBJ1010

SILICON BRIDGE RECTIFIERS

KBJ

VOLTAGE - 50 to 1000 Volts CURRENT - 10.0 Amperes

FEATURES

• Plastic material has Underwriters Laboratory

Flammability Classification 94V-O

• Ideal for printed circuit board

• Reliable low cost construction utilizing molded plastic technique

• Surge overload rating: 400 Amperes

• High temperature soldering guaranteed:

260°C/10 seconds/.375"(9.5mm) lead length at 5 lbs. (2.3kg) tension

• Pb free product are available : 99% Sn above can meet RoHS environment

substance directive request

MECHANICALDATA

Case: Reliable low cost construction utilizing

molded plastic technique

Terminals: Leads solderable per MIL-STD-750,

Method 2026

Mounting position: Any

Mounting torque: 20 in. lb. Max.

Weight: 7.056g

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

For Capacitive load derate current by 20%.

KBJ

PARAMETER

SYMBOL

V_RRM

V_RMS

V_DC

I_AV

UNITS

1000 1001 1002 1004 1006 1008 1010

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

400

1000

Maximum Average Forward Current for Resistive Load

at Tc =55к

Non-repetitive Peak Forward Surge Current at Rated

Load

I_FSM

180

Maximum Forward Voltage per Bridge Element at 10A

Specified Current

V_F

1.1

Maximum Reverse Leakage Current at Raed @ TA=25к

Typical Thermal Resistance per leg (Note) R_QJC

Operating Temperature Range

I_R

10.0

к / W

R_QJC

T_A

1.2

-50 to +125

-50 to + 150

Storage Temperature Range

T_STG

Note : Device mounted on 100mm * 100mm * 1.6mm Cu Plate Heatsink.

STAD-JAN.05.2005

PAGE . 1

中文翻译

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