是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FBGA, BGA137,10X15,32 |
Reach Compliance Code: | compliant | HTS代码: | 8542.32.00.71 |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 30 ns | JESD-30 代码: | R-PBGA-B137 |
JESD-609代码: | e3 | 内存集成电路类型: | MEMORY CIRCUIT |
混合内存类型: | FLASH+SDRAM | 湿度敏感等级: | 1 |
端子数量: | 137 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA137,10X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
峰值回流温度(摄氏度): | 225 | 电源: | 2.7 V |
认证状态: | Not Qualified | 最大待机电流: | 0.001 A |
子类别: | Other Memory ICs | 最大压摆率: | 0.02 mA |
标称供电电压 (Vsup): | 2.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | MATTE TIN | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KBE00F005A-D4110 | SAMSUNG |
获取价格 |
Memory Circuit, Flash+SDRAM, 8MX32, CMOS, PBGA137, 10.50 X 13 MM, 0.80 MM PITCH, LEAD FREE | |
KBE00G003M | SAMSUNG |
获取价格 |
NAND 512Mb*2 + Mobile SDRAM 256Mb*2 | |
KBE00G003M-D411 | SAMSUNG |
获取价格 |
NAND 512Mb*2 + Mobile SDRAM 256Mb*2 | |
KBE00S003M | SAMSUNG |
获取价格 |
1Gb NAND*2 + 256Mb Mobile SDRAM*2 | |
KBE00S003M-D411 | SAMSUNG |
获取价格 |
1Gb NAND*2 + 256Mb Mobile SDRAM*2 | |
KBE00S009M | SAMSUNG |
获取价格 |
1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 | |
KBE00S009M-D411 | SAMSUNG |
获取价格 |
1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 | |
KBE00S009M-D4110 | SAMSUNG |
获取价格 |
Memory Circuit, 16MX16, CMOS, PBGA137, 12 X 14 MM, 0.80 MM PITCH, LEAD FREE, FBGA-137 | |
KB-E100SRD | KINGBRIGHT |
获取价格 |
SINGLE COLOR LED ARRAY, HYPER RED, 8.89mm, | |
KBE100SRW | KINGBRIGHT |
获取价格 |
SINGLE COLOR LED ARRAY, SUPER BRIGHT RED, 8.89 mm, ROHS COMPLIANT PACKAGE-16 |