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KBE00F005A-D411 PDF预览

KBE00F005A-D411

更新时间: 2024-09-20 21:54:55
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路动态存储器
页数 文件大小 规格书
87页 1348K
描述
512Mb NAND*2 + 256Mb Mobile SDRAM*2

KBE00F005A-D411 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:FBGA, BGA137,10X15,32
Reach Compliance Code:compliantHTS代码:8542.32.00.71
风险等级:5.84Is Samacsys:N
最长访问时间:30 nsJESD-30 代码:R-PBGA-B137
JESD-609代码:e3内存集成电路类型:MEMORY CIRCUIT
混合内存类型:FLASH+SDRAM湿度敏感等级:1
端子数量:137最高工作温度:85 °C
最低工作温度:-25 °C封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA137,10X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
峰值回流温度(摄氏度):225电源:2.7 V
认证状态:Not Qualified最大待机电流:0.001 A
子类别:Other Memory ICs最大压摆率:0.02 mA
标称供电电压 (Vsup):2.7 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:MATTE TIN端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBE00F005A-D411 数据手册

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KBE00F005A-D411  
MCP MEMORY  
MCP Specification  
512Mb NAND*2 + 256Mb Mobile SDRAM*2  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
1
Revision 1.0  
June 2005  

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