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KBF090800M-D4080 PDF预览

KBF090800M-D4080

更新时间: 2024-11-21 19:47:19
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
72页 1387K
描述
Memory Circuit, 8MX16, CMOS, PBGA115, 8 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-115

KBF090800M-D4080 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA,
针数:115Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.84
其他特性:UTRAM IS ORGANIZED AS 4M X 16; UTRAM OPERATES AT 2.5V TO 2.7V SUPPLYJESD-30 代码:R-PBGA-B115
长度:12 mm内存密度:134217728 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:115
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

KBF090800M-D4080 数据手册

 浏览型号KBF090800M-D4080的Datasheet PDF文件第2页浏览型号KBF090800M-D4080的Datasheet PDF文件第3页浏览型号KBF090800M-D4080的Datasheet PDF文件第4页浏览型号KBF090800M-D4080的Datasheet PDF文件第5页浏览型号KBF090800M-D4080的Datasheet PDF文件第6页浏览型号KBF090800M-D4080的Datasheet PDF文件第7页 
Preliminary  
KBF0x0800M  
MCP MEMORY  
Document Title  
Multi-Chip Package MEMORY  
128M Bit(8Mx16) Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial Draft  
November 18, 2003 Preliminary  
(128M NOR Flash M-die_rev0.7)  
(64M UtRAM B-die_rev0.6)  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site.  
http://samsungelectronics.com/semiconductors/products/products_index.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1
Revision 0.0  
November 2003  

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