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K7P161866A PDF预览

K7P161866A

更新时间: 2024-11-14 03:47:11
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
14页 322K
描述
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM

K7P161866A 数据手册

 浏览型号K7P161866A的Datasheet PDF文件第2页浏览型号K7P161866A的Datasheet PDF文件第3页浏览型号K7P161866A的Datasheet PDF文件第4页浏览型号K7P161866A的Datasheet PDF文件第5页浏览型号K7P161866A的Datasheet PDF文件第6页浏览型号K7P161866A的Datasheet PDF文件第7页 
K7P163666A  
K7P161866A  
512Kx36 & 1Mx18 SRAM  
Document Title  
512Kx36 & 1Mx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Dec. 2001  
Advance  
Rev. 0.0  
- Initial Document  
Oct. 2002  
Advance  
Rev. 0.1  
- Absolute maximum ratings are changed  
VDD : 2.815 - > 3.13  
VDDQ : 2.815 - > 2.4  
VTERM : 2.815 - > VDDQ+0.5 (2.4V MAX)  
- Recommended DC operating conditions are changed  
VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9  
- DC characteristics is changed  
ISBZZ : 150 - > 128  
- AC Characteristics are changed  
TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3  
TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.6 / 0.6  
Jan. 2003  
Sep. 2003  
Advance  
Final  
Rev. 0.2  
Rev. 0.3  
- Recommended DC operating condition is changed  
Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6  
- Correct typo  
VDD -> VDDQ: in MODE CONTROL at page4  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Sep. 2003  
- 1 -  
Rev 0.3  

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