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K7A403200B-QI16T PDF预览

K7A403200B-QI16T

更新时间: 2024-11-15 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
19页 412K
描述
Standard SRAM, 128KX32, 3.5ns, CMOS, PQFP100

K7A403200B-QI16T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QFP, QFP100,.63X.87Reach Compliance Code:unknown
风险等级:5.92最长访问时间:3.5 ns
最大时钟频率 (fCLK):167 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:32
湿度敏感等级:1端子数量:100
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:2.5/3.3,3.3 V认证状态:Not Qualified
最大待机电流:0.05 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.29 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.635 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

K7A403200B-QI16T 数据手册

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K7A403600B  
K7A403200B  
K7A401800B  
128Kx36/x32 & 256Kx18 Synchronous SRAM  
4Mb Sync. Pipelined Burst SRAM  
Specification  
100 TQFP with Pb & Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-  
lar applications where Product failure could result in loss of life or personal or physical harm, or any military  
or defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 2.0 July 2006  
- 1 -  

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