Datasheet > K7A403200M

K7A403200M

更新时间： 2024-11-14 23:13:59

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
15页	405K
描述
128Kx32-Bit Synchronous Pipelined Burst SRAM

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K7A403200M 数据手册

K7A403200M

128Kx32 Synchronous SRAM

Document Title

128Kx32-Bit Synchronous Pipelined Burst SRAM

Revision History

Rev.No.

History

Draft Date

Remark

1.0

2.0

Initial draft

May . 19. 1998

June . 02. 1998

Final

change tCYC from 8.5ns to 10.0ns.

Modify Rev No. from 0.0 to 1.0.

3.0

Modify DC characteristics( Input Leakage Current test Conditions)

form VDD=VSS to VDD to Max.

June. 08. 1998

Final

4.0

5.0

Add VDDQ Supply voltage( 2.5V )

Dec. 02. 1998

Feb. 10. 1999

Final

Remove 119BGA(7x17 Ball Grid Array Package) .

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

February 1999

Rev 5.0

12 3 4 5 6 7...15

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与K7A403200M相关器件

型号	品牌	获取价格	描述	数据表
K7A403200M-10	SAMSUNG	获取价格	128Kx32-Bit Synchronous Pipelined Burst SRAM
K7A403200M-14	SAMSUNG	获取价格	128Kx32-Bit Synchronous Pipelined Burst SRAM
K7A403200M-15	SAMSUNG	获取价格	128Kx32-Bit Synchronous Pipelined Burst SRAM
K7A403200M-16	SAMSUNG	获取价格	128Kx32-Bit Synchronous Pipelined Burst SRAM
K7A403200M-QC10	SAMSUNG	获取价格	Standard SRAM, 128KX32, 4.5ns, CMOS, PQFP100
K7A403200M-QC100	SAMSUNG	获取价格	Cache SRAM, 128KX32, 4.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403200M-QC10T	SAMSUNG	获取价格	Standard SRAM, 128KX32, 4.5ns, CMOS, PQFP100
K7A403200M-QC14	SAMSUNG	获取价格	Standard SRAM, 128KX32, 4ns, CMOS, PQFP100
K7A403200M-QC140	SAMSUNG	获取价格	Cache SRAM, 128KX32, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403200M-QC14T	SAMSUNG	获取价格	Standard SRAM, 128KX32, 4ns, CMOS, PQFP100