K6T4016C3B-RB55T

更新时间： 2024-12-01 13:09:03

品牌	Logo	应用领域
三星 - SAMSUNG		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
9页	149K
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数据手册

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K6T4016C3B-RB55T 数据手册

CMOS SRAM

K6T4016C3B Family

Document Title

256Kx16 bit Low Power CMOS Static RAM

Revision History

Revision No.

History

Draft Data

Remark

0.0

Initial draft

June 28, 1996

Advance

0.1

Revise

September 19, 1996

Preliminary

- Die name change ; A to B

1.0

2.0

Finalize

December 17, 1996

February 17, 1997

Final

Revise

- Operating current update and release.

ICC(Read/Write) = 30/60 ® 15/75mA

ICC1(Read/Write) = 30/60 ® 15/75mA

ICC2 = 160 ® 130mA

3.0

4.0

Revise

February 17, 1998

June 22, 1998

Final

- Change datasheet format

- Remove ICC write value from table.

Revise

- Change test load at 55ns: 100pF ® 50pF

4.01

5.0

Errarta correction

August 8, 1998

May 22, 2001

Revise

Final

- Add 55ns product for industrial temperature

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 5.0

May 2001

12 3 4 5 6 7...9

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