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K6T4016C3C-RB55 PDF预览

K6T4016C3C-RB55

更新时间: 2024-12-01 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 145K
描述
Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44

K6T4016C3C-RB55 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2-R, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.91
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2-R封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
反向引出线:YES座面最大高度:1.2 mm
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

K6T4016C3C-RB55 数据手册

 浏览型号K6T4016C3C-RB55的Datasheet PDF文件第2页浏览型号K6T4016C3C-RB55的Datasheet PDF文件第3页浏览型号K6T4016C3C-RB55的Datasheet PDF文件第4页浏览型号K6T4016C3C-RB55的Datasheet PDF文件第5页浏览型号K6T4016C3C-RB55的Datasheet PDF文件第6页浏览型号K6T4016C3C-RB55的Datasheet PDF文件第7页 
CMOS SRAM  
K6T4016C3C Family  
Document Title  
256Kx16 bit Low Power CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
December 17, 1998  
April 17, 1999  
Preliminary  
Finalize  
1.0  
Finalize  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
April 1999  
1

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