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K6T4016S3C-TF100 PDF预览

K6T4016S3C-TF100

更新时间: 2024-11-09 14:51:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 151K
描述
Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K6T4016S3C-TF100 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:100 ns
JESD-30 代码:R-PDSO-G44长度:18.41 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

K6T4016S3C-TF100 数据手册

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K6T4016S3C Family  
CMOS SRAM  
Document Title  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
June 16, 1998  
Preliminary  
0.01  
Errata correction  
August 10, 1998  
1.0  
Finalize  
April 30, 1999  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will anwswer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
April 1999  

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