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K6T4016C3B-TB700 PDF预览

K6T4016C3B-TB700

更新时间: 2024-12-01 15:36:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 147K
描述
Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K6T4016C3B-TB700 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:70 nsJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

K6T4016C3B-TB700 数据手册

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CMOS SRAM  
K6T4016C3B Family  
Document Title  
256Kx16 bit Low Power CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
June 28, 1996  
Advance  
0.1  
Revise  
September 19, 1996  
Preliminary  
- Die name change ; A to B  
1.0  
2.0  
Finalize  
December 17, 1996  
February 17, 1997  
Final  
Final  
Revise  
- Operating current update and release.  
ICC(Read/Write) = 30/60 ® 15/75mA  
ICC1(Read/Write) = 30/60 ® 15/75mA  
ICC2 = 160 ® 130mA  
3.0  
4.0  
Revise  
February 17, 1998  
June 22, 1998  
Final  
Final  
- Change datasheet format  
- Remove ICC write value from table.  
Revise  
- Change test load at 55ns: 100pF ® 50pF  
4.01  
5.0  
Errarta correction  
August 8, 1998  
May 22, 2001  
Revise  
Final  
- Add 55ns product for industrial temperature  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 5.0  
May 2001  

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