5秒后页面跳转
K6F8008V2M-TF70 PDF预览

K6F8008V2M-TF70

更新时间: 2024-02-05 04:00:03
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 199K
描述
Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K6F8008V2M-TF70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:70 ns
JESD-30 代码:R-PDSO-G44长度:18.41 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:10.16 mm
Base Number Matches:1

K6F8008V2M-TF70 数据手册

 浏览型号K6F8008V2M-TF70的Datasheet PDF文件第2页浏览型号K6F8008V2M-TF70的Datasheet PDF文件第3页浏览型号K6F8008V2M-TF70的Datasheet PDF文件第4页浏览型号K6F8008V2M-TF70的Datasheet PDF文件第5页浏览型号K6F8008V2M-TF70的Datasheet PDF文件第6页浏览型号K6F8008V2M-TF70的Datasheet PDF文件第7页 
K6F8008V2M Family  
CMOS SRAM  
Document Title  
1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
August 25, 1999  
Remark  
0.0  
Initial draft  
Preliminary  
1.0  
Finalize  
February 24, 2000  
Final  
- Adopt new code.  
- Improve VIN, VOUT max. on A’ BSOLUTE MAXIMUM RATINGS’from  
3.6V to VCC+0.5V.  
- Improve VOH on D C AND OPERATING CHARACTERISTICS’from  
2.2 to 2.4V.  
2.0  
Revise  
April 26, 2000  
Final  
- Change for tWHZ: 25 to 20ns for 70ns product  
- Change for tDW: 20 to 25ns for 55ns product  
25 to 30ns for 70ns product  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.0  
April 2000  

与K6F8008V2M-TF70相关器件

型号 品牌 获取价格 描述 数据表
K6F8016R6A-EF700 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48
K6F8016R6B SAMSUNG

获取价格

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016R6B-F SAMSUNG

获取价格

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016R6D SAMSUNG

获取价格

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016R6D-F SAMSUNG

获取价格

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016R6D-FF70 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
K6F8016R6D-FF70T SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48,
K6F8016R6D-XF70 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
K6F8016R6D-XF700 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48,
K6F8016R6D-XF70T SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48,