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K6F8016T6C-FF70 PDF预览

K6F8016T6C-FF70

更新时间: 2024-09-27 21:57:19
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 175K
描述
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016T6C-FF70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:VFBGA, BGA48,6X8,30Reach Compliance Code:compliant
风险等级:5.88最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
长度:7 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:1功能数量:1
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1 mm
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.022 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

K6F8016T6C-FF70 数据手册

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Preliminary  
CMOS SRAM  
K6F8016T6C Family  
Document Title  
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
July 30, 2003  
Preliminary  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 0.0  
July 2003  

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