5秒后页面跳转
K6F8016U6M-FF700 PDF预览

K6F8016U6M-FF700

更新时间: 2024-02-25 15:23:09
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 159K
描述
Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48

K6F8016U6M-FF700 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.82
最长访问时间:70 nsJESD-30 代码:R-PBGA-B48
长度:12 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

K6F8016U6M-FF700 数据手册

 浏览型号K6F8016U6M-FF700的Datasheet PDF文件第2页浏览型号K6F8016U6M-FF700的Datasheet PDF文件第3页浏览型号K6F8016U6M-FF700的Datasheet PDF文件第4页浏览型号K6F8016U6M-FF700的Datasheet PDF文件第5页浏览型号K6F8016U6M-FF700的Datasheet PDF文件第6页浏览型号K6F8016U6M-FF700的Datasheet PDF文件第7页 
K6F8016U6M Family  
CMOS SRAM  
Document Title  
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
June 23, 1999  
Advance  
1.0  
Finalized  
April 17, 2000  
Final  
- Errata correction  
- Change for tWHZ: 25 to 20ns for 70ns product.  
- Change for tDW: 20 to 25ns for 55ns product.  
25 to 30ns for 70ns product.  
1.01  
Errata correction for package dimension  
- E: 1.05 to 1.10mm  
August 24, 2000  
- E1: 0.80 to 0.85mm  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.01  
August 2000  

与K6F8016U6M-FF700相关器件

型号 品牌 获取价格 描述 数据表
K6F8016V3A SAMSUNG

获取价格

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016V3A-F SAMSUNG

获取价格

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016V3A-RF550 SAMSUNG

获取价格

Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
K6F8016V3A-RF70 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
K6F8016V3A-TF55 SAMSUNG

获取价格

Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6F8016V3A-TF550 SAMSUNG

获取价格

Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6F8016V3A-TF70 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6F8016V3M-RB550 SAMSUNG

获取价格

Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
K6F8016V3M-RB700 SAMSUNG

获取价格

Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
K6F8016V3M-RF55 SAMSUNG

获取价格

Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44