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K6F8016U3A-RB55 PDF预览

K6F8016U3A-RB55

更新时间: 2024-02-07 07:23:16
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 147K
描述
Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44

K6F8016U3A-RB55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2-R, TSOP44,.46,32
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.89最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2-R封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3 V认证状态:Not Qualified
反向引出线:YES座面最大高度:1.2 mm
最大待机电流:0.000006 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.04 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

K6F8016U3A-RB55 数据手册

 浏览型号K6F8016U3A-RB55的Datasheet PDF文件第2页浏览型号K6F8016U3A-RB55的Datasheet PDF文件第3页浏览型号K6F8016U3A-RB55的Datasheet PDF文件第4页浏览型号K6F8016U3A-RB55的Datasheet PDF文件第5页浏览型号K6F8016U3A-RB55的Datasheet PDF文件第6页浏览型号K6F8016U3A-RB55的Datasheet PDF文件第7页 
K6F8016U3A Family  
CMOS SRAM  
Document Title  
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
2.0  
Initial draft  
December 11, 2000 Preliminary  
Finalize  
- Isb1 change : 25mA to 15mA  
September 27, 2001 Final  
Revise  
January 17, 2002  
Final  
- ICC2 change : 35mA to 40mA for 55ns product  
28mA to 30mA for 70ns product  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.0  
January 2002  

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