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K6F8016U6A-EF55 PDF预览

K6F8016U6A-EF55

更新时间: 2024-09-28 15:36:03
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 158K
描述
Standard SRAM, 512KX16, 55ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48

K6F8016U6A-EF55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.89最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:9 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3 V
认证状态:Not Qualified座面最大高度:1 mm
最大待机电流:0.000006 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.04 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7 mm
Base Number Matches:1

K6F8016U6A-EF55 数据手册

 浏览型号K6F8016U6A-EF55的Datasheet PDF文件第2页浏览型号K6F8016U6A-EF55的Datasheet PDF文件第3页浏览型号K6F8016U6A-EF55的Datasheet PDF文件第4页浏览型号K6F8016U6A-EF55的Datasheet PDF文件第5页浏览型号K6F8016U6A-EF55的Datasheet PDF文件第6页浏览型号K6F8016U6A-EF55的Datasheet PDF文件第7页 
K6F8016U6A Family  
CMOS SRAM  
Document Title  
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
August 14, 2000  
Preliminary  
0.1  
Revise  
September 28, 2000 Preliminary  
- Change Package type from FBGA to TBGA  
1.0  
Finalize  
- Improved ICC1 from 4 to 3mA  
- Removed ICC, ISB  
March 14, 2001  
April 3, 2001  
Final  
1.01  
2.0  
Revise  
- Errata correction for finalized year from 2000 to 2001  
Revise  
September 27, 2001 Revise  
- ISB1 change : 25mA to 15mA  
- ICC2 change : 40mA to 35mA for 55ns product  
35mA to 28mA for 70ns product  
- Remove "A1 Index Mark" of 48-TBGA package bottom side  
- Changed 48-TBGA vertical dimension  
E1(typical) 0.55mm to 0.58mm  
E2(typical) 0.35mm to 0.32mm  
3.0  
Revise  
January 17, 2002  
Final  
- ICC2 change : 35mA to 40mA for 55ns product  
28mA to 30mA for 70ns product  
- Changed 48-TBGA vertical dimension  
E1(typical) 0.58mm to 0.55mm  
E2(typical) 0.32mm to 0.35mm  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 3.0  
January 2002  

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