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K6F2008V2E-YF55 PDF预览

K6F2008V2E-YF55

更新时间: 2024-11-10 22:09:47
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 136K
描述
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008V2E-YF55 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.56,20
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91Is Samacsys:N
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:11.8 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000002 A
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.035 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

K6F2008V2E-YF55 数据手册

 浏览型号K6F2008V2E-YF55的Datasheet PDF文件第2页浏览型号K6F2008V2E-YF55的Datasheet PDF文件第3页浏览型号K6F2008V2E-YF55的Datasheet PDF文件第4页浏览型号K6F2008V2E-YF55的Datasheet PDF文件第5页浏览型号K6F2008V2E-YF55的Datasheet PDF文件第6页浏览型号K6F2008V2E-YF55的Datasheet PDF文件第7页 
K6F2008V2E Family  
CMOS SRAM  
Document Title  
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
1.1  
Initial draft  
July 19 , 2001  
Preliminary  
Finalize  
September 27, 2001  
May 13, 2003  
Final  
Final  
Revised  
- Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package.  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.1  
1
May 2003  

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