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K4T51163QI-HCE6T PDF预览

K4T51163QI-HCE6T

更新时间: 2024-11-24 10:38:19
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
46页 1043K
描述
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,

K4T51163QI-HCE6T 数据手册

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Rev. 1.1, Jul. 2011  
K4T51043QI  
K4T51083QI  
K4T51163QI  
512Mb I-die DDR2 SDRAM  
60 & 84FBGA with Lead-Free & Halogen-Free  
(RoHS compliant)  
datasheet  
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND  
SPECIFICATIONS WITHOUT NOTICE.  
Products and specifications discussed herein are for reference purposes only. All information discussed  
herein is provided on an "AS IS" basis, without warranties of any kind.  
This document and all information discussed herein remain the sole and exclusive property of Samsung  
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  
right is granted by one party to the other party under this document, by implication, estoppel or other-  
wise.  
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  
similar applications where product failure could result in loss of life or personal or physical harm, or any  
military or defense application, or any governmental procurement to which special terms or provisions  
may apply.  
For updates or additional information about Samsung products, contact your nearest Samsung office.  
All brand names, trademarks and registered trademarks belong to their respective owners.  
2011 Samsung Electronics Co., Ltd. All rights reserved.  
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