是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 0.45 ns | 最大时钟频率 (fCLK): | 333 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 4,8 |
JESD-30 代码: | R-PBGA-B60 | JESD-609代码: | e1 |
内存密度: | 1073741824 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
端子数量: | 60 | 字数: | 134217728 words |
字数代码: | 128000000 | 组织: | 128MX8 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA60,9X11,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.55 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 4,8 |
子类别: | DRAMs | 最大压摆率: | 0.225 mA |
标称供电电压 (Vsup): | 1.55 V | 表面贴装: | YES |
技术: | CMOS | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4T1G084QQ-HYE60 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | |
K4T1G164QA-ZCCC | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | |
K4T1G164QA-ZCD5 | SAMSUNG |
获取价格 |
1Gb A-die DDR2 SDRAM Specification | |
K4T1G164QA-ZCD50 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | |
K4T1G164QA-ZCD5T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | |
K4T1G164QA-ZCE6 | SAMSUNG |
获取价格 |
1Gb A-die DDR2 SDRAM Specification | |
K4T1G164QA-ZCE60 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | |
K4T1G164QD | SAMSUNG |
获取价格 |
1Gb D-die DDR2 SDRAM Specification | |
K4T1G164QD-ZCCC | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA84 | |
K4T1G164QD-ZCCCT | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA84 |