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K4T1G164QA-ZCE6 PDF预览

K4T1G164QA-ZCE6

更新时间: 2024-01-17 14:19:38
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
28页 612K
描述
1Gb A-die DDR2 SDRAM Specification

K4T1G164QA-ZCE6 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA84,9X15,32Reach Compliance Code:compliant
风险等级:5.84最长访问时间:0.45 ns
最大时钟频率 (fCLK):333 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B84
内存密度:1073741824 bit内存集成电路类型:DDR DRAM
内存宽度:16端子数量:84
字数:67108864 words字数代码:64000000
组织:64MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA84,9X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:8192
连续突发长度:4,8最大待机电流:0.015 A
子类别:DRAMs最大压摆率:0.35 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
Base Number Matches:1

K4T1G164QA-ZCE6 数据手册

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1G A-die DDR2 SDRAM  
DDR2 SDRAM  
1Gb A-die DDR2 SDRAM Specification  
Version 1.1  
August 2005  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.1 Aug. 2005  
Page 1 of 28  

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