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K4T1G164QD-ZCE7 PDF预览

K4T1G164QD-ZCE7

更新时间: 2024-10-27 15:36:03
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
27页 589K
描述
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84

K4T1G164QD-ZCE7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FBGA, BGA84,9X15,32
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:0.4 ns最大时钟频率 (fCLK):400 MHz
I/O 类型:COMMON交错的突发长度:4,8
JESD-30 代码:R-PBGA-B84内存密度:1073741824 bit
内存集成电路类型:DDR DRAM内存宽度:16
湿度敏感等级:3端子数量:84
字数:67108864 words字数代码:64000000
组织:64MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA84,9X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:8192连续突发长度:4,8
最大待机电流:0.015 A子类别:DRAMs
最大压摆率:0.28 mA标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

K4T1G164QD-ZCE7 数据手册

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K4T1G084QD  
K4T1G164QD  
DDR2 SDRAM  
1Gb D-die DDR2 SDRAM Specification  
60FBGA & 84FBGA with Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
-1 of 29  
Rev. 1.0 March 2007  

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