生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSSOP, | 针数: | 86 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.31 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5.5 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PDSO-G86 |
长度: | 22.22 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 86 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 2MX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S643232F-TI70 | SAMSUNG |
获取价格 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V | |
K4S643232F-TI700 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | |
K4S643232F-TL45 | SAMSUNG |
获取价格 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | |
K4S643232F-TL50 | SAMSUNG |
获取价格 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | |
K4S643232F-TL500 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | |
K4S643232F-TL55 | SAMSUNG |
获取价格 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | |
K4S643232F-TL550 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | |
K4S643232F-TL60 | SAMSUNG |
获取价格 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | |
K4S643232F-TL600 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | |
K4S643232F-TL70 | SAMSUNG |
获取价格 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |