Datasheet > K4S640832D

K4S640832D

更新时间： 2022-12-12 15:44:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	130K
描述
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

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K4S640832D 数据手册

K4S640832D

CMOS SDRAM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Version

- 75 - 80 - 1H - 1L -10

Parameter

Symbol

Test Condition

Unit Note

Burst length = 1

tRC ³ tRC(min)

IO = 0 mA

Operating current

(One bank active)

ICC1

70 70 70

ICC2P CKE £ VIL(max), tCC = 10ns

Precharge standby current in

power-down mode

ICC2PS CKE & CLK £ VIL(max), tCC = ¥

CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns

ICC2N

Input signals are changed one time during 20ns

Precharge standby current in

non power-down mode

CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥

ICC2NS

Input signals are stable

ICC3P CKE £ VIL(max), tCC = 10ns

Active standby current in

power-down mode

ICC3PS CKE & CLK £ VIL(max), tCC = ¥

CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns

ICC3N

Active standby current in

non power-down mode

(One bank active)

Input signals are changed one time during 20ns

CKE ³ VIH(min), CLK £ VIL(max), tCC = ¥

Input signals are stable

ICC3NS

IO = 0 mA

Operating current

(Burst mode)

Page burst

4Banks Activated

ICC4

115 110 95 95 95

tCCD = 2CLKs

Refresh current

ICC5

ICC6

tRC ³ tRC(min)

CKE £ 0.2V

135 130 125 125 125 mA

Self refresh current

400

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S640832D-TC**

4. K4S640832D-TL**

5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Rev. 0.0 May 1999

1 2 3 456 7 8...10

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与K4S640832D相关器件

型号	品牌	描述	获取价格	数据表
K4S640832D-TC/L10	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L1H	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L1L	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L75	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L80	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC10	SAMSUNG	Synchronous DRAM, 8MX8, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54	获取价格