Datasheet > K4S640832D

K4S640832D

更新时间： 2022-12-12 15:44:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	130K
描述
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

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K4S640832D 数据手册

K4S640832D

CMOS SDRAM

AC CHARACTERISTICS(AC operating conditions unless otherwise noted)

- 75

- 80

- 1H

- 1L

- 10

Parameter

Symbol

tCC

Unit Note

Min Max Min Max Min Max Min Max Min Max

CAS latency=3

7.5

CLK cycle time

1000

1000 ns

1,2

CAS latency=2

CAS latency=3

CAS latency=2

CAS latency=3

CAS latency=2

5.4

CLK to valid

output delay

tSAC

2.7

Output data

hold time

tOH

CLK high pulse width

CLK low pulse width

Input setup time

tCH

tCL

2.5

1.5

0.8

3.5

2.5

1.5

tSS

Input hold time

tSH

tSLZ

CLK to output in Low-Z

CAS latency=3

CAS latency=2

5.4

CLK to output

in Hi-Z

tSHZ

Notes : 1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf) = 1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered,

i.e., [(tr + tf)/2-1]ns should be added to the parameter.

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Notes

Measure in linear

region : 1.2V ~1.8V

Output rise time

trh

1.37

4.37

3.8

5.6

5.0

Volts/ns

Measure in linear

region : 1.2V ~1.8V

Output fall time

Output rise time

Output fall time

tfh

trh

tfh

1.30

2.8

Measure in linear

region : 1.2V ~1.8V

3.9

2.9

1,2

Measure in linear

region : 1.2V ~1.8V

2.0

Notes :

1. Rise time specification based on 0pF + 50 Ohms to VSS, use these values to design to.

2. Fall time specification based on 0pF + 50 Ohms to VDD, use these values to design to.

3. Measured into 50pF only, use these values to characterize to.

4. All measurements done with respect to VSS.

Rev. 0.0 May 1999

1...4 5 678 9 10

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