Datasheet > K4S640832D

K4S640832D

更新时间： 2022-12-12 15:44:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	130K
描述
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4S640832D 数据手册

K4S640832D

CMOS SDRAM

2M x 8Bit x 4 Banks Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

The K4S640832D is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,

fabricated with SAMSUNG¢s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock I/O transactions are possible on every clock

cycle. Range of operating frequencies, programmable burst

length and programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance mem-

ory system applications.

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock

• Burst read single-bit write operation

• DQM for masking

ORDERING INFORMATION

• Auto & self refresh

Part No.

Max Freq.

Interface Package

• 64ms refresh period (4K Cycle)

K4S640832D-TC/L75 133MHz(CL=3)

K4S640832D-TC/L80 125MHz(CL=3)

K4S640832D-TC/L1H 100MHz(CL=2)

K4S640832D-TC/L1L 100MHz(CL=3)

K4S640832D-TC/L10 66MHz(CL=2 &3)

LVTTL

TSOP(II)

FUNCTIONAL BLOCK DIAGRAM

LWE

Data Input Register

LDQM

Bank Select

2M x 8

DQi

CLK

ADD

Column Decoder

Latency & Burst Length

LCKE

Programming Register

LRAS

LCBR

LWE

LCAS

LWCBR

LDQM

Timing Register

CLK

CKE

RAS

CAS

DQM

Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.0 May 1999

123 4 5 6 7...10

下载PDF

与K4S640832D相关器件

型号	品牌	描述	获取价格	数据表
K4S640832D-TC/L10	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L1H	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L1L	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L75	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC/L80	SAMSUNG	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL	获取价格
K4S640832D-TC10	SAMSUNG	Synchronous DRAM, 8MX8, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54	获取价格