Datasheet > K4H560838E-UC/LB3

K4H560838E-UC/LB3

更新时间： 2024-10-31 22:31:07

品牌	Logo	应用领域
三星 - SAMSUNG		电子动态存储器双倍数据速率
页数	文件大小	规格书
23页	297K
描述
256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

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K4H560838E-UC/LB3 数据手册

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free

DDR SDRAM

256Mb E-die DDR SDRAM Specification

66 TSOP-II with Pb-Free

(RoHS compliant)

Revision 1.1

October, 2004

Rev. 1.1 October, 2004

12 3 4 5 6 7...23

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型号	品牌	获取价格	描述	数据表
K4H560838E-UCA2	SAMSUNG	获取价格	256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560838E-UCA20	SAMSUNG	获取价格	DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT,
K4H560838E-UCAA	SAMSUNG	获取价格	256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560838E-UCAA0	SAMSUNG	获取价格	DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2
K4H560838E-UCB0	SAMSUNG	获取价格	256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560838E-UCB0T	SAMSUNG	获取价格	暂无描述
K4H560838E-UCB3	SAMSUNG	获取价格	256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H560838E-UCB30	SAMSUNG	获取价格	DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, T
K4H560838E-UCB3T	SAMSUNG	获取价格	DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66
K4H560838E-UCCC	SAMSUNG	获取价格	DDR DRAM, 32MX8, 0.65ns, CMOS, PDSO66