Datasheet > K4E171612D-TC50T

K4E171612D-TC50T

更新时间： 2024-11-07 05:49:55

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
35页	398K
描述
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44,

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K4E171612D-TC50T 数据手册

K4E171611D, K4E151611D

K4E171612D, K4E151612D

CMOS DRAM

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of

memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K

Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-

refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS pro-

cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,

personal computer and portable machines.

FEATURES

• Extended Data Out Mode operation

• Part Identification

(Fast Page Mode with Extended Data Out)

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

- K4E171611D-J(T) (5V, 4K Ref.)

- K4E151611D-J(T) (5V, 1K Ref.)

- K4E171612D-J(T) (3.3V, 4K Ref.)

- K4E151612D-J(T) (3.3V, 1K Ref.)

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

3.3V

Speed

• Available in plastic SOJ 400mil and TSOP(II) packages

• Single +5V±10% power supply (5V product)

• Single +3.3V ±0.3V power supply (3.3V product)

-45

-50

-60

360

324

288

540

504

468

550

495

440

825

770

715

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh period

VCC

RAS

UCAS

LCAS

Vcc

Nor-

L-ver

Control

Vss

Clocks

VBB Generator

Row Decoder

K4E171611D

64ms

K4E171612D 3.3V

K4E151611D 5V

Lower

Data in

Buffer

128ms

DQ0

Refresh Timer

16ms

K4E151612D 3.3V

DQ7

Lower

Data out

Buffer

Refresh Control

Refresh Counter

Memory Array

1,048,576 x16

Cells

Upper

Data in

Buffer

• Performance Range

DQ8

DQ15

Speed

-45

Remark

5V/3.3V

tRAC

45ns

50ns

60ns

tCAC

13ns

15ns

tRC

tHPC

16ns

20ns

A0-A11

(A0 - A9)*1

A0 - A7

Row Address Buffer

Col. Address Buffer

Upper

Data out

Buffer

69ns

84ns

Column Decoder

(A0 - A9)*1

-50

-60

17ns 104ns 25ns

Note) *1 : 1K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...35

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与K4E171612D-TC50T相关器件

型号	品牌	获取价格	描述	数据表
K4E171612D-TC60	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E171612D-TC600	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44,
K4E171613C-TL60	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E171613C-TL70	SAMSUNG	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E171613C-TN60	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E171613C-TN70	SAMSUNG	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E171614C-TL60	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E171614C-TN70	SAMSUNG	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E640411B-JC60	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4E640411B-TC450	SAMSUNG	获取价格	EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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