Datasheet > K4E171614C-TL60

K4E171614C-TL60

更新时间： 2024-09-17 04:04:55

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
35页	635K
描述
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

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中文翻译

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K4E171614C-TL60 数据手册

K4E171613(4)C

CMOS DRAM

Low Power 1M x 16Bit CMOS Dynamic RAM with EDO

DESCRIPTION

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs with low operating & self refresh voltage. Extended Data Out

Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+3.0V/

+2.5V), access time (-60/-70), power consumption and package type(TSOP-Il) are optional features of this family. All of this family have

CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-ver.

This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as buffer memory or main memory unit for mobile system.

FEATURES

• Extended Data Out Mode operation

(Fast Page Mode with Extended Data Out)

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

• Part Identification

Operating

Voltage

Self-Refresh

Voltage(min)

Part No.

• RAS-only and Hidden refresh capability

• Self-refresh capability

K4E171613C-TL

K4E171613C-TN*

K4E171614C-TL

K4E171614C-TN*

3.0V

2.5V

2.3V

• Self-refresh bump capability(3.0V product)

• LVTTL(3.0V/2.5V) compatible inputs and ouputs

• Early Write or output enable controlled write

• Available in plastic TSOP(ll) packages

• Single 3.0V+0.6V/-0.3V power supply (3.0V product)

• Single 2.5V±0.2V power supply (2.5V product)

* Extended temperature : -25°C to 85°C

• Active Power Dissipation

Unit : mW

Operation Voltage

Part No.

Speed

3.0V

324

2.5V

216

189

K4E171613C-TL(N)

K4E171614C-TL(N)

-60

-70

FUNCTIONAL BLOCK DIAGRAM

RAS

UCAS

LCAS

• Refresh Cycles

Part No.

Vcc

Vss

Control

Clocks

Refresh period

4K/128ms

VBB Generator

K4E171613C-TL(N)

K4E171614C-TL(N)

Lower

Data in

Buffer

DQ0

Row Decoder

Refresh Timer

Refresh Control

DQ7

Lower

Data out

Buffer

• Performance Range

Memory Array

1,048,576 x16

Cells

Speed

Part No.

tRAC tCAC

tRC

tHPC

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

K4E171613C-TL(N)

K4E171614C-TL(N)

-60 60ns 17ns 104ns 25ns

-70 70ns 20ns 124ns 30ns

DQ8

DQ15

A0-A11

A0 - A7

Upper

Data out

Buffer

K4E171614C-TL(N)

Column Decoder

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...35

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与K4E171614C-TL60相关器件

型号	品牌	获取价格	描述	数据表
K4E171614C-TN70	SAMSUNG	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
K4E640411B-JC60	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4E640411B-TC450	SAMSUNG	获取价格	EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411B-TC50	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411B-TC500	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411B-TC60	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411D-JC50	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640411D-JC60	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640411D-JC60T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32
K4E640411D-TC50	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out

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