Datasheet > K4E640411B-TC60

K4E640411B-TC60

更新时间： 2024-09-17 06:28:27

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
21页	415K
描述
EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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中文翻译

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K4E640411B-TC60 数据手册

K4E660411B,K4E640411B

CMOS DRAM

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random

access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), package type (SOJ or

TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capa-

bilities. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low

power consumption and high reliability.

FEATURES

• Extended Data Out Mode operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• TTL(5.0V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Part Identification

- K4E660411B-JC(5.0V, 8K Ref., SOJ)

- K4E640411B-JC(5.0V, 4K Ref., SOJ)

- K4E660411B-TC(5.0V, 8K Ref., TSOP)

- K4E640411B-TC(5.0V, 4K Ref., TSOP)

• Active Power Dissipation

Unit : mW

• Available in Plastic SOJ and TSOP(II) packages

• +5.0V±10% power supply

Speed

-45

550

495

440

715

660

605

-50

-60

• Refresh Cycles

FUNCTIONAL BLOCK DIAGRAM

Part

NO.

Refresh

cycle

Refresh time

Normal

K4E660411B*

K4E640411B

RAS

CAS

Vcc

Vss

64ms

Control

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms

CAS-before-RAS & Hidden refresh mode

: 4K cycle/64ms

Row Decoder

Refresh Timer

Refresh Control

Data in

Buffer

Memory Array

16,777,216 x 4

Cells

DQ0

DQ3

Refresh Counter

Row Address Buffer

Col. Address Buffer

• Performance Range

Speed

Data out

Buffer

tRAC

45ns

50ns

60ns

tCAC

12ns

13ns

15ns

tRC

tHPC

17ns

20ns

25ns

A0~A12

(A0~A11)*1

-45

-50

-60

74ns

84ns

104ns

A0~A10

(A0~A11)*1

Column Decoder

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...21

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与K4E640411B-TC60相关器件

型号	品牌	获取价格	描述	数据表
K4E640411D-JC50	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640411D-JC60	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640411D-JC60T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32
K4E640411D-TC50	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640411D-TC500	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411D-TC60	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640411D-TC600	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411D-TC60T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32
K4E640412B-JC50	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4E640412B-TC450	SAMSUNG	获取价格	EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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