K4E640411D-TC60

更新时间： 2024-11-08 23:15:11

品牌	Logo	应用领域
三星 - SAMSUNG		存储
页数	文件大小	规格书
21页	412K
描述
16M x 4bit CMOS Dynamic RAM with Extended Data Out

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中文翻译

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数据手册

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K4E640411D-TC60 数据手册

K4E660411D,K4E640411D

CMOS DRAM

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random

access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -50, or -60), package type (SOJ or TSOP-

II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

This 16Mx4 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power

consumption and high reliability.

FEATURES

• Extended Data Out Mode operation

• Part Identification

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• TTL(5.0V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

- K4E660411D-JC(5.0V, 8K Ref., SOJ)

- K4E640411D-JC(5.0V, 4K Ref., SOJ)

- K4E660411D-TC(5.0V, 8K Ref., TSOP)

- K4E640411D-TC(5.0V, 4K Ref., TSOP)

• Active Power Dissipation

• Available in Plastic SOJ and TSOP(II) packages

• +5.0V±10% power supply

Unit : mW

Speed

-50

495

440

660

605

-60

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh time

Normal

FUNCTIONAL BLOCK DIAGRAM

K4E660411D*

K4E640411D

64ms

RAS

CAS

Vcc

Vss

Control

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms

CAS-before-RAS & Hidden refresh mode

: 4K cycle/64ms

Row Decoder

Refresh Timer

Data in

Buffer

Refresh Control

Refresh Counter

Memory Array

16,777,216 x 4

Cells

DQ0

DQ3

• Performance Range

Speed

Data out

Buffer

Row Address Buffer

Col. Address Buffer

tRAC

50ns

60ns

tCAC

13ns

15ns

tRC

tPC

A0~A12

(A0~A11)*1

-50

-60

84ns

104ns

20ns

25ns

A0~A10

(A0~A11)*1

Column Decoder

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...21

中文翻译

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与K4E640411D-TC60相关器件

型号	品牌	获取价格	描述	数据表
K4E640411D-TC600	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640411D-TC60T	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32
K4E640412B-JC50	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4E640412B-TC450	SAMSUNG	获取价格	EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640412C-TL600	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640412D	SAMSUNG	获取价格	16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640412D-JL500	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4E640412D-JL60	SAMSUNG	获取价格	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4E640412D-TC45	SAMSUNG	获取价格	EDO DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4E640412D-TC50	SAMSUNG	获取价格	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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