是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, BGA48,6X8,30 | 针数: | 48 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.62 |
Is Samacsys: | N | 最长访问时间: | 100 ns |
其他特性: | ALSO CONFIGURABLE AS 4M X 16 | 备用内存宽度: | 8 |
JESD-30 代码: | S-PBGA-B48 | JESD-609代码: | e0 |
长度: | 9 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.8,3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大待机电流: | 0.00005 A | 子类别: | MASK ROMs |
最大压摆率: | 0.06 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K3P7Q1000B-FC10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48 | |
K3P7U1000A-GC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
K3P7U1000A-YC | SAMSUNG |
获取价格 |
MASK ROM | |
K3P7U1000A-YC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K3P7U1000B-FC | SAMSUNG |
获取价格 |
MASK ROM | |
K3P7U1000B-FC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48 | |
K3P7U1000B-GC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
K3P7U1000B-TC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
K3P7U1000B-YC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K3P7U1000B-YC120 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 |